(Graphic from the Alaska Travel Industry Association)2016 was a record year for Alaska tourism.Listen nowAccording to a report from the Alaska Tourism Industry Association, the state had 1,857,500 visitors last summer — that reflects a four percent increase since the previous year and the highest amount on record.Over a million of those visitors came by cruise ship, but air travel to Alaska increased by 6 percent, according to the ATIA report — contributing a large part to the tourism bump.ATIA president Sarah Leonard said there were several things that contributed to the increased numbers.“We’ve talked about with low fuel prices, that road highway travel saw an increase over the past year,” Leonard said. “And we know and we’ve been supporting the ferry system and working out a more sustainable schedule and a more sustainable way of operating.”Leonard pointed out that the per-person spending amount of each visit was up for 2016 but she’s not totally optimistic the positive tourism trend will continue.She cited decreased marketing budgets from the state of Alaska as a main cause for concern.
Semiconductor provider Transphorm has announced that its third-generation high-voltage gallium nitride (GaN) field-effect transistor (FET) has passed AEC-Q101 stress tests for automotive-grade discrete semiconductors. The transistor targets EV applications including on-board chargers, DC-DC converters, and DC-AC inverter systems.Transphorm’s new FET, the TP65H035WSQA, performed at 175° C during AEC-Q101 qualification testing, which the company says will give design engineers ample thermal headroom when developing power systems. In addition to AEC-Q101 qualification, the FET is also JEDEC-certified.“Proving device quality and reliability is perhaps the most critical factor influencing customer confidence in high-voltage GaN FETs – particularly in the automotive and electric vehicle markets,” said Transphorm’s Philip Zuk. “To that end, we ensure that our GaN maintains its performance and reliability even in real-world conditions that may be far harsher than what mission profiles call for. As shown by the published reliability data, our JEDEC-qualified Gen III platform has a Field Failure FIT rate of 3, which is in line with that of silicon carbide. It’s this high reliability level that allowed Transphorm to release a Gen III automotive FET at 175 degrees Celsius.” Source: Transphorm Source: Electric Vehicles Magazine